Taiwan Semiconductor http://web.ts.com.tw/en Taiwan Semiconductor Global Official Website Mon, 26 Aug 2024 03:53:27 +0000 en-US hourly 1 https://wordpress.org/?v=6.6.1 http://web.ts.com.tw/en/wp-content/uploads/2023/06/favicon01-150x150.png Taiwan Semiconductor http://web.ts.com.tw/en 32 32 2024 ECCE http://web.ts.com.tw/en/2024-ecce/?utm_source=rss&utm_medium=rss&utm_campaign=2024-ecce http://web.ts.com.tw/en/2024-ecce/#respond Mon, 26 Aug 2024 03:47:39 +0000 https://web.ts.com.tw/en/?p=16449 Taiwan Semiconductor at Electronica India 2024 Taiwan Semiconductor is excited to announce its participation in Electronica India 2024. This premier electronics industry event will take place from September 11th to 13th, 2024, in Greater Noida. Electronica India offers a valuable platform for industry professionals to connect, share knowledge, and explore the latest trends. We invite …

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Taiwan Semiconductor at ECCE 2024

The IEEE Energy Conversion Congress and Exposition (ECCE) is one of the top conferences for the exchange of cutting-edge research and developments in the field of energy conversion and power electronics.  Today, it brings together researchers, engineers, scientists, and industry professionals to share their latest work in areas such as power electronic systems and devices, motor drives, electric machines, electrification of transportation, renewable energy systems, energy storage systems, microgrids, and power quality.

Here are a few additional interesting facts about the conference:

  • ECCE is the 3rd. largest attended power electronics/ energy conversion conference in the world. Attendance is nearly 2000 people, including researchers, engineers, scientists, and industry professionals from around the world.
  • IEEE ECCE normally refers to the North American version of the conference hosted annually in the fall. However, ECCE Asia (spring) and ECCE Europe (late summer) also exist.
  • The conference features an exhibit hall where companies and organizations showcase their latest products and services related to energy conversion and power electronics. Taiwan Semiconductor at booth 411 will have working demos at our booth. 
  • The conference has a strong emphasis on industry-academia collaboration and provides opportunities for attendees to network and establish partnerships.
  • ECCE conference papers have more downloads and annual citations than any other IEEE conference within the scope of electrical energy conversion.
  • ECCE features a variety of technical sessions, including oral presentations, poster sessions, tutorials, and panel discussions.
  • IEEE ECCE 2024 will be held from Oct. 20-24, 2024 in Phoenix, Arizona.

We invite you to visit our booth 411 to learn more about how Taiwan Semiconductor can support your electronic projects.

For media inquiries, please contact: sales@tscus.com

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Battery management system (BMS): Protecting and Managing Your Electric Vehicle http://web.ts.com.tw/en/blog-bms/?utm_source=rss&utm_medium=rss&utm_campaign=blog-bms http://web.ts.com.tw/en/blog-bms/#respond Mon, 19 Aug 2024 06:10:32 +0000 https://web.ts.com.tw/en/?p=16321 Did you know that electric vehicles actually predate gasoline-powered cars? While there’s some debate about whether the first electric vehicle was invented in 1832 or 1881, it’s clear that it came before Karl Benz introduced the first gasoline-powered car in 1886. In fact, electric and gasoline cars were neck and neck in popularity around the …

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Did you know that electric vehicles actually predate gasoline-powered cars? While there’s some debate about whether the first electric vehicle was invented in 1832 or 1881, it’s clear that it came before Karl Benz introduced the first gasoline-powered car in 1886. In fact, electric and gasoline cars were neck and neck in popularity around the early 1900s. However, the rise of the petroleum industry in the 1920s made gasoline significantly cheaper, and the internal combustion engine has dominated the automotive industry ever since. Electric vehicles became a mere footnote in automotive history.

The Importance of BMS

Despite this, electricity remains a crucial component of modern vehicles. In electric vehicles, power management is even more critical. If the battery is the heart of an electric vehicle, then the Battery Management System (BMS) is its brain. The BMS controls and monitors the electric vehicle’s power, ensuring optimal battery performance, longevity, efficiency, and most importantly, safety. It monitors the battery system to prevent issues like overcharging, over-discharging, and short circuits.

An electric vehicle’s power comes from a high-voltage lithium-ion battery pack composed of numerous cells connected in series and parallel. This battery can be charged directly using a DC fast charger or indirectly using an AC charger and the vehicle’s on-board charger (OBC), which converts AC power to DC power. The high-voltage battery can directly power high-voltage components like the motor inverter or air conditioning inverter, or it can be converted to 12V by an auxiliary power module (APM) to power lower-voltage components like the vehicle’s computer, lights, and wipers.

To protect the high-voltage battery from damage, the BMS, which includes components like transient voltage suppressors (TVS) and diodes, manages charging and discharging, selects power sources, and monitors and protects the battery system.

Different charging methods for electric vehicles: AC vs. DC

BMS Architecture

Typically, a BMS consists of a control module and a measurement module: an analog front-end (AFE), a microcontroller unit (MCU), and a gauge (see figure). The gauge can be a separate IC or integrated within the MCU.

The AFE’s function is to balance the energy of individual lithium-ion cells and provide voltage, temperature, and current readings from the battery to the MCU and gauge. The gauge obtains readings from the AFE and then uses complex battery modeling and advanced algorithms to estimate critical parameters such as State of Charge (SoC) and State of Health (SoH).

The MCU is the core component of the BMS. It connects to the system and receives information from the AFE and gauge. As the BMS needs to prevent the vehicle’s battery from overheating due to overcharge or over-discharge, leading to fire or explosion, the MCU will quickly transmit a signal to the relay when there is an anomaly, controlling whether the current in the entire circuit is working normally or is cut off.

High voltage BMS structure diagram

For low-voltage BMS architectures in applications like electric motorcycles and golf carts, where system currents are relatively low, the relay structure is often replaced with a back-to-back N-channel MOSFET configuration for charge and discharge protection. To minimize power losses in the circuit during operation, MOSFETs with low on-resistance (RDS(on)) are selected to protect the battery while achieving low power dissipation and improving circuit conversion efficiency, ensuring stable power supply.

The AFE module’s operating power typically comes from the managed lithium-ion battery. Due to occasional transient voltage spikes on the lithium-ion battery line, a TVS (Transient Voltage Suppressor) is added to both the control circuit and the lithium-ion cell to prevent damage to the control circuit. When a transient voltage occurs, the excess energy is dissipated through the TVS, protecting the acquisition module.

The power supply for the MCU and gauge modules primarily comes from the vehicle’s 12V battery. A TVS and a reverse protection diode are added to the front end of the power supply to meet safety regulations.

Low voltage BMS structure diagram

Taiwan Semiconductor offers a comprehensive range of components, including TVS, Zener diodes, and MOSFETs, to support your BMS and ensure optimal vehicle power management.

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Beyond Braking: Advanced Driver Assistance Systems (ADAS) for a Safer Driving Experience http://web.ts.com.tw/en/blog-adas/?utm_source=rss&utm_medium=rss&utm_campaign=blog-adas http://web.ts.com.tw/en/blog-adas/#respond Mon, 19 Aug 2024 03:47:02 +0000 https://web.ts.com.tw/en/?p=16243 In the history of automotive development, aside from the evolution of power output, the most significant investment in research and development has been dedicated to providing drivers and passengers with more comprehensive safety protection. Initially, this focused on passive safety features such as airbags, seatbelts, and crumple zone design. With the rapid advancement from microcomputers …

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In the history of automotive development, aside from the evolution of power output, the most significant investment in research and development has been dedicated to providing drivers and passengers with more comprehensive safety protection. Initially, this focused on passive safety features such as airbags, seatbelts, and crumple zone design. With the rapid advancement from microcomputers to automotive computers, the focus shifted to active safety design, giving rise to the concept of Advanced Driver Assistance Systems (ADAS).

While ADAS features like Anti-lock Braking Systems (ABS) have been around for a longer time, the concept of driver assistance has been applied for even longer. As early as 1995, BMW introduced the Park Distance Control (PDC) system in the E38 model, which used ultrasonic signals to help drivers understand the distance between the vehicle and front and rear obstacles during parking, preventing collisions. This marked the beginning of the development of systems that actively influence driver control based on detected vehicle environment data.

Modern ADAS systems are generally divided into three parts: sensors, processors, and actuators. First, sensors such as cameras, radar, ultrasonic sensors, and even more expensive LiDAR are used to measure the distribution of the vehicle’s surrounding environment using light, images, and sound waves. These sensors are typically installed on the front and rear bumpers, windshield, and side mirrors, with the number of sensors depending on the vehicle’s ADAS configuration. According to the SAE International standard, the lowest level, Level 0, has no automated driving functions and only provides driving assistance information. For example, the commonly used Around View Monitoring (AVM) system only requires the installation of cameras and short-range radar.

ADAS is not synonymous with autonomous driving but is a prerequisite for achieving it. Processors and actuators play a crucial role in self-driving technology at Level 1 and above. In addition to displaying the sensor data for driver reference, the data is also transmitted to the processor, where the Electronic Control Unit (ECU) analyzes it and makes decisions, which are then transmitted to the actuators to control the throttle and steering wheel, enabling partial or fully automated vehicle control. For example, the Level 2 Automatic Parking Assist (APA) system only requires the driver to control the throttle, while the actuator operates the steering wheel.

Market sales data and public information show that Level 1 and Level 2 self-driving technologies will remain the mainstream for the next five years. Cameras and ultrasonic sensors are the primary components. Although cameras rely on software to simulate human visual perception to judge the environment, they are susceptible to weather and light conditions. However, compared to radar and LiDAR, cameras are less expensive and can be installed at multiple angles on the vehicle to obtain a complete view of the environment, making them the current mainstream configuration for ADAS.

Cameras provide image information and are therefore called image sensors (CIS: CMOS Image Sensor). The captured color image is divided into red, green, and blue pixels by a filter and enters the CIS. The CIS, based on its resolution and pixel design, has a corresponding matrix. Each pixel is a photodiode. When a photodiode receives light, it is converted into an electrical signal, which is transmitted through CMOS switches as an analog signal to the next component, the analog front-end (AFE), where it is converted into a digital signal and then processed by an image signal processor (ISP) to generate an image, which is then transmitted to the processor SoC (System on Chip) for calculation, judgment, prediction, and even learning. The conversion from analog to digital signals requires extremely fast speed and low interference, allowing the SoC to accurately interpret the data in real-time and provide the necessary parameters for the backend actuator to operate, assisting the vehicle in steering and power system driving.

CMOS Image Sensor and Signal Processing

With the rapid development of ADAS, there is a need for stable and fast electronic signal transmission. As the amount of information transmitted increases, more power is required. Since ADAS has multiple processors, such as PCIE Switch, Security ECU, etc., to avoid interference between different controllers when problems occur, each processor requires a separate power supply. Additionally, to meet the requirements of down-conversion and reducing electromagnetic interference (EMI) within a limited space, power supply circuits often use Power Management ICs (PMICs), which integrate DC/DC converters and low dropout regulators (LDOs) and have a smaller footprint. For example, as mentioned earlier, if the CMOS image sensor encounters problems with image acquisition due to freezing at low temperatures, a heater is used to heat the CMOS sensor, and the power for the heater needs to be provided by a boost converter. The boost converter uses MOSFETs as switching elements.

ADAS Scale

MOSFETs offer advantages such as fast switching speed, low power consumption, and high efficiency, making them ideal for ABS systems. They can quickly switch the pressure in the brake hydraulic system to adapt to changes in vehicle braking needs. Additionally, MOSFETs can effectively handle high currents and high-temperature environments, which is particularly important in automotive ABS systems.

The solenoid in the brake hydraulic valve body is controlled by the MCU in the ECU. In addition to the main control MOSFET, there are also freewheeling diodes used to protect the solenoid coil and control the application circuit. During braking, when the solenoid is energized, current flows through the solenoid coil, causing the valve to open and allowing hydraulic pressure to enter the valve body to apply braking force. However, when the solenoid is de-energized, the pressure in the hydraulic valve body is fixed, preventing continuous application of braking force and causing tire lockup. In the application circuit, due to the residual magnetizing current in the solenoid coil, a freewheeling diode is used to allow the current to decay smoothly, preventing the occurrence of voltage spikes and protecting the electronic devices in the circuit from damage.

Freewheeling diodes typically have high reverse voltage capability and high pulse current capability, enabling them to withstand the high voltage and high current operating environment of automotive ABS systems. Additionally, they have fast switching speeds and low forward voltage drop, reducing energy loss and ensuring efficient system operation.

Taiwan Semiconductor offers AEC-Q101 qualified PRD products. In addition, Taiwan Semiconductor can also provide customers with automotive-grade MOSFETs and TVS for ABS system protection devices to meet the requirements of automotive-specific test standards such as ISO 7637-2, ISO 10650, and ISO 16750-2.

Power Management and Protection in ADAS

ADAS systems play a detailed and complex role in a vehicle’s electrical control system. To protect the circuit from transient overvoltage caused by events like lightning strikes or electrostatic discharge (ESD), it is essential to use TVS diodes for overvoltage protection. TVS diodes have a very low reverse breakdown voltage. When the voltage across the diode exceeds a certain threshold, it begins to conduct, limiting the voltage to the breakdown voltage of the TVS diode and protecting downstream circuits from damage.

TAIWAN SEMICONDUCTOR offers a range of automotive-grade PRD products that fully comply with the AEC-Q101 standard. Moreover, we can provide customers with AEC-Q101 qualified MOSFETs and TVS diodes for ABS system protection devices, meeting the stringent requirements of automotive-specific test standards such as ISO 7637-2, ISO 10650, and ISO 16750-2.

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Powering the Electric Revolution: The Body Control Module (BCM) in Automotive http://web.ts.com.tw/en/blog-bcm/?utm_source=rss&utm_medium=rss&utm_campaign=blog-bcm http://web.ts.com.tw/en/blog-bcm/#respond Fri, 16 Aug 2024 08:55:01 +0000 https://web.ts.com.tw/en/?p=16255 As automobiles become increasingly intelligent, drivers expect more than just basic driving functions; they desire a more humanized and convenient driving experience, such as automated parking assistance and keyless entry. In recent years, with the expansion of the electric vehicle market, the automotive industry has become highly reliant on semiconductors for its power systems. The …

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As automobiles become increasingly intelligent, drivers expect more than just basic driving functions; they desire a more humanized and convenient driving experience, such as automated parking assistance and keyless entry. In recent years, with the expansion of the electric vehicle market, the automotive industry has become highly reliant on semiconductors for its power systems. The Body Control Module (BCM) is a crucial component in automotive engineering, serving as a central hub that integrates various functions and facilitates data exchange between different electronic devices, ensuring driving safety and comfort.

The BCM, also known as the Body Computer, is the management center and information hub of a vehicle, comparable to the human brain or the CPU in a computer. It receives external signals and controls the body systems, responding with appropriate functions. The scope of its control has expanded significantly over the years, encompassing body devices (windows, wipers, mirrors), safety devices (anti-theft systems, remote start), lighting systems (LED headlights, fog lights, indicators), fuel pumps, and heating and air conditioning systems.

The diagram below illustrates the solutions provided by Taiwan Semiconductor at different stages of the BCM.

Body Control Module

Protection

During automotive repair or assembly, reverse connection of the vehicle’s power supply can expose the vehicle controller to damage from reverse voltage. Automotive regulations and OEMs have established requirements for reverse polarity protection in vehicle controllers to mitigate this risk. As a result, reverse polarity protection circuits have become commonplace. These circuits primarily consist of diodes, TVS diodes, or MOSFETs.

 TVS

As a vehicle is in motion, components interact with each other, creating potential interference. A TVS diode in this context can be likened to a door damper. Imagine two cabinets: one with a door damper and the other without. If both doors are closed with the same force, the door without the damper will slam shut quickly and loudly, potentially damaging the cabinet over time. However, the door with the damper will close more gently, protecting the cabinet.

Load Dump TVS

Beyond component-to-component interference, the alternator charging the lead-acid battery can generate transient voltage spikes, especially when driving over rough roads that cause the battery connections to loosen. These high-voltage spikes can last for a relatively long duration and can damage electronic components.

Taiwan Semiconductor’s Load Dump TVS is designed to protect electronic circuits from these transient voltage spikes caused by loose lead-acid battery connections. This component can withstand the transient voltage spikes generated by the alternator and protects automotive electronics, meeting the ISO 7637-2 and ISO 16750-2 test standards. Additionally, it can also meet the IEC 61000-4-2 (Level 4) and ISO 10605 (Level L4) test specifications.

Unclamped
Clamped

Bias Supply

A 12V lead-acid automotive battery is typically converted to 3.3V, 5V, or other voltage levels using a voltage regulator (linear or switching) to power CAN bus/LIN bus transceivers and MCUs.

There are two primary types of voltage regulators:

  • Linear Regulator (LDO) Linear regulators, often referred to as LDOs, are suitable for converting higher input voltages to lower output voltages. LDOs typically consume relatively low power and are well-suited for applications requiring low noise, low current, and a small input-output voltage differential, providing a stable output voltage.
  • Switching Regulator Switching regulators primarily consist of MOSFETs and diodes. By periodically switching the circuit on and off based on a duty cycle (the percentage of time the circuit is on), they generate a stable output voltage. Switching regulators offer a wide range of applications, high efficiency, and ease of use.

 

Interface

CAN bus/LIN bus transceivers primarily serve as communication channels. Think of them as nerves in the human body. When the body receives a stimulus, nerves transmit the signal to the brain. Similarly, when a vehicle receives an external signal (digital input/analog input), it is transmitted to the MCU via the CAN bus or LIN bus. The CAN bus is the primary network, while the LIN bus is a secondary or sub-network.

Load Driver

Once the BCM receives external signals and processes them through the microcontroller unit (MCU), the MCU sends these signals to the corresponding loads, such as body devices (windows, wipers, mirrors).

Many of these devices contain motor-driven loads. Motors are primarily classified into brushed DC (BDC) motors and brushless DC (BLDC) motors. MOSFETs are used to control the direction and speed of these motors.

  • Brushed DC (BDC) Motor BDC motors are a low-cost solution and are commonly used for small load control in automobiles, such as seat adjustment, window switches, and wipers. BDC motors typically use four MOSFETs and a commutator for commutation, making them easy to operate and cost-effective.
  • 3-phase brushless DC (BLDC) Motor BLDC motors employ six MOSFETs and offer low power loss, high reliability, and low noise, making them the preferred choice for high-power applications. With the increasing adoption of electric motors in automobiles, costs are decreasing, making brushless motors increasingly popular in the market.
Brushed DC motor: 4 MOSFETs. (BDC)
Brushless DC motor: 6 MOSFETs. (BLDC)

Additionally, BDC motors have a commutator structure compared to BLDC motors, resulting in more audible noise during operation. To illustrate this, BDC motors can be likened to old ceiling fans that produce a humming sound, while BLDC motors are akin to newer standing fans that operate more quietly.

Feature
Brushed DC (BDC) Motor
Brushless DC (BLDC) Motor
Operation
Easy
High controllability
Cost
Low
Low loss
Service life
Short (brushes wear easily)
Long
Noise
Noisy (due to brushes)
Low noise
Cooling
Easy to cool
Applications

1. Window/sunroof control
2. seat adjustment
3. door locks

1. EPS (Electric Power Steering)
2. braking system
3. HVAC (Heating, Ventilation, and Air Conditioning)
4. transmission system
5. water pump
fuel pump

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The Role of MOSFETs in Anti-lock Braking Systems (ABS) http://web.ts.com.tw/en/blog-abs/?utm_source=rss&utm_medium=rss&utm_campaign=blog-abs http://web.ts.com.tw/en/blog-abs/#respond Thu, 15 Aug 2024 03:23:35 +0000 https://web.ts.com.tw/en/?p=16215 During vehicle operation, when encountering emergency situations or sudden obstacles, most drivers will instinctively step on the brake pedal as hard as possible in an attempt to decelerate quickly. However, the sudden and excessive braking force can cause the wheels to lock up, transitioning the friction between the tires and the road from high-coefficient static …

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During vehicle operation, when encountering emergency situations or sudden obstacles, most drivers will instinctively step on the brake pedal as hard as possible in an attempt to decelerate quickly. However, the sudden and excessive braking force can cause the wheels to lock up, transitioning the friction between the tires and the road from high-coefficient static friction to low-coefficient kinetic friction. This can result in loss of control, such as skidding or sliding, significantly reducing the vehicle’s ability to avoid obstacles. To prevent loss of control and wheel skidding during emergency braking, modern vehicles are now equipped with Anti-lock Braking System (ABS) as standard.

The Anti-lock Braking System monitors the rotational speed of the four wheels and the vehicle speed difference. By adjusting the hydraulic pressure to each wheel’s brake caliper, the ABS system can maintain a stable control state during deceleration through a cycle of applying and releasing brake pressure 20-25 times per second, similar to the “pumping” of the brake pedal. This allows the driver to maintain steering control and minimize damage.

The ABS system consists of an electronic control unit (ECU), wheel speed sensors on each of the four wheels, a hydraulic pump, and a brake hydraulic valve body. The wheel speed sensors on each wheel transmit the rotational speed signals to the ECU.

The ECU continuously calculates the vehicle speed and the difference between the wheel speed and the vehicle speed, known as the slip ratio. When the slip ratio becomes too high, the ECU issues a control command to adjust the brake calipers of each wheel, maintaining the wheel slip ratio between 10% and 30% to prevent wheel lockup. Under this braking mode, good longitudinal and lateral adhesion between the tires and the road is ensured, effectively preventing the vehicle from skidding, fishtailing, or losing steering during braking, improving the directional stability of the vehicle during braking. Additionally, the ABS system maintains the braking force at an optimal level, shortening the braking distance and reducing the wear and tear on the tires.

To achieve the goal of improving vehicle braking safety and control performance, MOSFETs, as electronic devices, are widely used in ABS systems due to their ability to effectively control current and power.

In ABS systems, MOSFETs are primarily used to control the adjustment and switching of brake fluid pressure. When the vehicle performs emergency braking or needs to prevent tire lockup, the ABS system changes the solenoid in the brake hydraulic valve body through PWM signals. By controlling the pressurization, holding, and depressurization of the internal wheel cylinder within the controller, the opening and closing of the brake caliper is achieved, balancing the rotation and grip of the tires. MOSFETs, as electronic switches, can adjust the brake pressure according to the control signal, thereby controlling the tire grip.

In addition to the brake hydraulic valve body, the hydraulic pump control circuit is also mainly based on power MOSFETs, supplemented by protection circuits and isolation measures to ensure reliability. A dedicated self-diagnosis circuit is also designed for fault detection.

The ABS ECU architecture diagram

MOSFETs offer advantages such as fast switching speed, low power consumption, and high efficiency, making them ideal for ABS systems. They can quickly switch the pressure in the brake hydraulic system to adapt to changes in vehicle braking needs. Additionally, MOSFETs can effectively handle high currents and high-temperature environments, which is particularly important in automotive ABS systems.

The solenoid in the brake hydraulic valve body is controlled by the MCU in the ECU. In addition to the main control MOSFET, there are also freewheeling diodes used to protect the solenoid coil and control the application circuit. During braking, when the solenoid is energized, current flows through the solenoid coil, causing the valve to open and allowing hydraulic pressure to enter the valve body to apply braking force. However, when the solenoid is de-energized, the pressure in the hydraulic valve body is fixed, preventing continuous application of braking force and causing tire lockup. In the application circuit, due to the residual magnetizing current in the solenoid coil, a freewheeling diode is used to allow the current to decay smoothly, preventing the occurrence of voltage spikes and protecting the electronic devices in the circuit from damage.

Freewheeling diodes typically have high reverse voltage capability and high pulse current capability, enabling them to withstand the high voltage and high current operating environment of automotive ABS systems. Additionally, they have fast switching speeds and low forward voltage drop, reducing energy loss and ensuring efficient system operation.

Taiwan Semiconductor offers AEC-Q101 qualified PRD products. In addition, Taiwan Semiconductor can also provide customers with automotive-grade MOSFETs and TVS for ABS system protection devices to meet the requirements of automotive-specific test standards such as ISO 7637-2, ISO 10650, and ISO 16750-2.

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2024 electronica India http://web.ts.com.tw/en/2024-electronica-india/?utm_source=rss&utm_medium=rss&utm_campaign=2024-electronica-india http://web.ts.com.tw/en/2024-electronica-india/#respond Thu, 08 Aug 2024 09:28:54 +0000 https://web.ts.com.tw/en/?p=16163 Taiwan Semiconductor at Electronica India 2024 Taiwan Semiconductor is excited to announce its participation in Electronica India 2024. This premier electronics industry event will take place from September 11th to 13th, 2024, in Greater Noida. Electronica India offers a valuable platform for industry professionals to connect, share knowledge, and explore the latest trends. We invite …

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Taiwan Semiconductor at Electronica India 2024

Taiwan Semiconductor is excited to announce its participation in Electronica India 2024. This premier electronics industry event will take place from September 11th to 13th, 2024, in Greater Noida.

Electronica India offers a valuable platform for industry professionals to connect, share knowledge, and explore the latest trends.

We invite you to visit our booth H11.J51 to learn more about how Taiwan Semiconductor can support your electronic projects.

For media inquiries, please contact: sales@tscind.in

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2024 electronica China http://web.ts.com.tw/en/2024-electronica-china/?utm_source=rss&utm_medium=rss&utm_campaign=2024-electronica-china http://web.ts.com.tw/en/2024-electronica-china/#respond Tue, 18 Jun 2024 07:45:08 +0000 https://web.ts.com.tw/en/?p=15726 慕尼黑上海电子展将于2024年7月8-10日在上海新国际博览中心举办。 展会今年重点梳理电子行业年度脉络,以新能源汽车、储能、智能驾驶、卫星通信、机器人、可穿戴、智能建筑、边缘智能、智慧电源、第三代半导体等应用领域为年度热门趋势,汇聚国内外优质电子企业加入,打造从产品设计到应用落地的横跨产业上下游的专业展示平台;展示领域紧跟行业重点,并根据行业实时热点融入新的展示领域。欢迎莅临我们的展位E3.3700! Munich Shanghai Electronica Fair to be held at Shanghai New International Expo Center from July 8-10, 2024 The fair will focus on the annual trends of the electronics industry this year, covering trendy application fields such as new energy vehicles, energy storage, intelligent driving, satellite communication, robots, wearables, smart buildings, edge intelligence, smart …

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慕尼黑上海电子展将于2024年7月8-10日在上海新国际博览中心举办。

展会今年重点梳理电子行业年度脉络,以新能源汽车、储能、智能驾驶、卫星通信、机器人、可穿戴、智能建筑、边缘智能、智慧电源、第三代半导体等应用领域为年度热门趋势,汇聚国内外优质电子企业加入,打造从产品设计到应用落地的横跨产业上下游的专业展示平台;展示领域紧跟行业重点,并根据行业实时热点融入新的展示领域。欢迎莅临我们的展位E3.3700!

Munich Shanghai Electronica Fair to be held at Shanghai New International Expo Center from July 8-10, 2024

The fair will focus on the annual trends of the electronics industry this year, covering trendy application fields such as new energy vehicles, energy storage, intelligent driving, satellite communication, robots, wearables, smart buildings, edge intelligence, smart power, third-generation semiconductors, etc., and gathering high-quality electronics companies from across the globe to create a professional exhibition platform spanning the upstream and downstream of the industry from product design to application landing. Get a glimpse into the future of electronics with exhibits on the latest trends and hottest topics. Welcome to visit our booth E3.3700!

展会重点 Event highlights

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4th Generation 600V Super Junction MOSFETs http://web.ts.com.tw/en/4th-generation-600v-super-junction-mosfets/?utm_source=rss&utm_medium=rss&utm_campaign=4th-generation-600v-super-junction-mosfets http://web.ts.com.tw/en/4th-generation-600v-super-junction-mosfets/#respond Mon, 03 Jun 2024 05:49:33 +0000 https://web.ts.com.tw/en/?p=15673 Taiwan Semiconductor introduces the 4th generation 600V NE series super junction MOSFETs which are designed to improve efficiency and power density in high voltage applications. The latest technology of the NE super junction MOSFET enables exceptionally low on-state resistance (Ron) and low gate charge capacitance (Qg). The achievement of 30% FOM (figure-of-merit; Ron * Qg) …

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Taiwan Semiconductor introduces the 4th generation 600V NE series super junction MOSFETs which are designed to improve efficiency and power density in high voltage applications. The latest technology of the NE super junction MOSFET enables exceptionally low on-state resistance (Ron) and low gate charge capacitance (Qg). The achievement of 30% FOM (figure-of-merit; Ron * Qg) improvement results in higher value in many HV applications vs alternative options.

Key Features

  • 4th Generation Super Junction technology
  • Low gate charge capacitance
  • Excellent switching performance
  • High gate noise immunity

Applications

  • Off-line switching power conversion
  • Server power supplies
  • HV motor drivers
  • UPS systems
  • Lighting controls

Product Portfolio

Part NumberPackageBVDSS (V)RDS(ON) max (mΩ)ID (A)VGS(TH) (V)TJ max (°C)
TSM60NE069CITITO-220TL60069264 ~ 6150
TSM60NE084CIT60084224 ~ 6150
TSM60NE110CIT600110194 ~ 6150
TSM60NE145CIT600145144 ~ 6150
TSM60NE180CIT600180134 ~ 6150
TSM60NE200CIT600200124 ~ 6150
TSM60NE285CIT6002857.14 ~ 6150
TSM60NE048PWTO-247-3L60048644 ~ 6150
TSM60NE069PW60069464 ~ 6150
TSM60NE084PW60084414 ~ 6150
TSM60NE285CHTO-251600285114 ~ 6150
TSM60NE285CPTO-252600285114 ~ 6150

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Bi-directional ESD Protection Diode http://web.ts.com.tw/en/bi-directional-esd-protection-diode/?utm_source=rss&utm_medium=rss&utm_campaign=bi-directional-esd-protection-diode http://web.ts.com.tw/en/bi-directional-esd-protection-diode/#respond Thu, 16 May 2024 03:13:04 +0000 https://web.ts.com.tw/en/?p=15542 TESDL24VB17P1Q1 is a unique design with proprietary clamping cells in a small package. The DFN1006 package size is 1.0 mm x 0.6 mm and the thickness is only 0.5 mm, which can meet the needs of new products for small packages. During transient conditions, the proprietary clamping cells prevent over-voltage on the control/data/power lines, protecting …

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TESDL24VB17P1Q1 is a unique design with proprietary clamping cells in a small package. The DFN1006 package size is 1.0 mm x 0.6 mm and the thickness is only 0.5 mm, which can meet the needs of new products for small packages. During transient conditions, the proprietary clamping cells prevent over-voltage on the control/data/power lines, protecting any downstream components.

Applications

  • Battery contacts
  • Power management system
  • Portable devices
  • Digital cameras
  • Digital frames
  • Cellular handsets and accessories
  • Notebooks, desktops and servers
  • Microprocessor-based equipment

Application diagram

Product Portfolio

Part NumberVWMCJ maxESD robustness (IEC61000-4-2)IPPM (at tp= 8/20μs)
TESDL24VB17P1Q124V30pF30KV5A

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Wide-bandgap SiC 650V Schottky Barrier Diodes Improve Efficiency in High-Power Systems http://web.ts.com.tw/en/wide-bandgap-sic-650v-schottky-barrier-diodes-improve-efficiency-in-high-power-systems/?utm_source=rss&utm_medium=rss&utm_campaign=wide-bandgap-sic-650v-schottky-barrier-diodes-improve-efficiency-in-high-power-systems http://web.ts.com.tw/en/wide-bandgap-sic-650v-schottky-barrier-diodes-improve-efficiency-in-high-power-systems/#respond Wed, 15 May 2024 06:23:53 +0000 https://web.ts.com.tw/en/?p=15440 This family of 650V silicon carbide Schottky barrier diode is suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall …

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This family of 650V silicon carbide Schottky barrier diode is suitable for high-efficiency AC-DC, DC-DC and DC-AC conversion applications. Unlike silicon-based fast-recovery rectifiers, these SiC devices have negligible switching losses due to low capacitive charge (QC). This makes them suitable for high-speed switching applications, benefitting circuit designs with increased power density and can reduce overall solution size.

Key Features

  • Max. junction temperature 175°C
  • High-speed switching
  • High frequency operation
  • Positive temperature coefficient on VF
  • SPICE Models available
  • Thermal Models available

Applications

  • AD-DC conversion – PFC Boost
  • DC-DC, Solar inverters
  • Data center and server power
  • Telecom – Datacom power
  • UPS systems

Circuit Functions

  • PFC boost diode
  • Free-wheeling diode
  • Full wave bridge
  • Vienna bridgeless circuit

Product Portfolio

Part NumberPackageVRRM (V)IF (A)VF @ TA= 25°CIR @TA= 25°C Typ. (μA)IR @TA= 175°C Typ. (μA)IFSM (A)QC Typ (nC)
Typ. (V)Max. (V)
TSCDF06065G1ITO-220AC-2L65061.321.450.375.324420.8
TSCDF08065G181.350.615.57227.12
TSCDF10065G1101.340.85.428431.7
TSCDF12065G1121.360.7510.18837.16
TSCDF16065G1161.380.879.610049.03
TSCDF20065G1201.381.3711.312865.57
TSCDT06065G1TO-220AC-2L61.320.375.324420.8
TSCDT08065G181.350.615.57227.12
TSCDT10065G1101.340.85.428431.7
TSCDT12065G1121.360.7510.18837.16
TSCDT16065G1161.380.879.610049.03
TSCDT20065G1201.381.3711.312865.57
TSCDH16065G1TO-247-3L161.330.619.086829.18
TSCDH20065G1201.340.635.58835.39
TSCDH30065G1301.360.969.6112854.36
TSCDH40065G1401.330.818.7814064.85

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