Blog - Taiwan Semiconductor https://web.ts.com.tw/en Taiwan Semiconductor Global Official Website Wed, 26 Mar 2025 08:20:01 +0000 en-US hourly 1 https://wordpress.org/?v=6.7.2 https://web.ts.com.tw/en/wp-content/uploads/2023/06/favicon01-150x150.png Blog - Taiwan Semiconductor https://web.ts.com.tw/en 32 32 Snapback TVSs Deliver More Accurate And Robust Circuit Protection https://web.ts.com.tw/en/snapback-tvss/?utm_source=rss&utm_medium=rss&utm_campaign=snapback-tvss https://web.ts.com.tw/en/snapback-tvss/#respond Mon, 10 Mar 2025 07:03:37 +0000 https://web.ts.com.tw/en/?p=17623 In the rapidly advancing world of electronics, circuit protection is critical to ensuring equipment and system longevity, reliability, and safety. One of the latest innovations in this field is snapback TVS (transient voltage suppressor) technology. While no device is perfect for all applications, the advancement of snapback TVS technology brings the industry closer to the …

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In the rapidly advancing world of electronics, circuit protection is critical to ensuring equipment and system longevity, reliability, and safety. One of the latest innovations in this field is snapback TVS (transient voltage suppressor) technology. While no device is perfect for all applications, the advancement of snapback TVS technology brings the industry closer to the ideal solution for protecting many applications across various markets, including consumer electronics where warranty returns can consume entire profit margins.
This article begins with some comments on the technology and market trends that are driving adoption of TVSs. It then provides an overview of conventional TVS devices, discussing their pros and cons, starting with historical solutions like SCRs, and then moving onto the currently used gas discharge tubes, metal oxide varistors, and TVSs.


With that as background, the article describes how snapback TVS device technology offers a groundbreaking approach to circuit protection compared to previous TVS methods and devices. The characteristics and behavior of snapback TVSs are discussed with some data presented to illustrate the differences between conventional and snapback TVSs. This leads to a discussion of application benefits and an application example.

The Growing Need For TVS Protection

First, some history on transient voltage suppression is needed. The real world is replete with both natural and manmade transient electrical energy. In the beginning, most electronics didn’t really need much protection from these events, but when electronics applications transitioned from solid-state to integrated-circuit—and now to VLSI—technologies, each generation became more sensitive to transients and surges. Circuit protection became increasingly necessary on ac and dc power lines and on the I/O connectivity that makes equipment work in the real world.

Lighting applications, for example, until a short time ago were 100% electric and employed electronics based on magnetics and capacitors for their ballast designs. Then the lighting industry moved to using more complex and sensitive electronics, from high-frequency switching electronic ballasts for fluorescent lighting, to the now ubiquitous LED lighting systems that use electronic drivers. Today, proximate lightning and utility equipment switching events cause plenty of transients that can damage lighting electronics. Add to this challenge that manufacturers often require warranties of five, seven, and even 10 years—despite these electronics being more susceptible to damage.
Along with the challenge of protecting more-sensitive electronic systems, electronics designers must conduct industry qualification testing and meet a number of specifications for many applications worldwide. These include IEC61000-4-2/3/4/5 and the IEEE C62.41 ringing waveform testing, as well as tests for automotive such as ISO and SAE specifications ISO7637-2 or ISO16750-2.

Evolving TVS Technology

Before describing snapback TVS technology, let’s explore the historical approaches to mitigating electrical transients. The purpose of a TVS device is to convert transient electrical energy into transient thermal energy and to dissipate it as heat. One of its primary goals is to dissipate this heat energy as quickly as possible and then reset for another event.
One of the first TVS solutions was the SCR clamp. Although it worked, this device was very prone to false triggering. Proximate noise, either conducted or radiated, entering the circuit triggered the SCR until the power source was recycled and the current through the SCR went to zero. This was not an option for equipment needing 100% uptime and, for that reason, SCR clamps aren’t really used today.

Another early technology, gas discharge tubes, or GDTs, were mainly used as circuit protection in the era of copper telecommunications lines to protect against lightning strikes. They are still widely used in a plethora of applications, often in combination with other protection devices. Among other benefits, GDTs are reasonably fast-responding. However, they have a limited lifetime and degrade with repeated application of transients depending on the magnitude of the transient.
In the 70s, we saw the invention of the MOV (metal oxide varistor). This device was a significant step forward in TVS technology, offering many benefits and few downsides. However, both MOVs and gas tubes can fail short and thus require the addition of series current-limiting devices like fuses and circuit breakers.
From the late 70s to the mid-80s, semiconductor TVS devices were developed, and were available in both bi- and uni-directional options. Semiconductor TVS device have fast response times and good thermal performance with a lifespan that can be limited by simply not overdissipating (overheating) the die too far above 175°C. They are more precise and rugged than previous methods—unless they are overdissipated.

Table 1 compares the characteristics of the traditional TVS devices described above. All of these technologies have drawbacks in precision, accuracy, and temperature coefficient. For example, MOVs are not able to withstand multiple transient events. I have seen MOVs turned into talcum powder with a couple of leads sticking out of the board as a result of too much repetitive transient energy being applied.
In addition, all types have a tempco issue in which the clamping voltage tends to change with temperature. It’s not only the ambient temperature that’s a concern in this regard but also the repetitive pulses that can heat up the protection device. This behavior is a problem since, as stated earlier, a key function of a TVS device is to dissipate the heat from the transient being converted into thermal energy.

Table 1. A comparison of conventional TVS devices.

Emergence Of Snapback TVS Technology

Ideally, a TVS device would have a “not to exceed” voltage, such that a 24-V bus could be protected with a 24- V protection device. It would also have zero response time, infinite ability to withstand repeated transients of any magnitude, no degradation with application of repeated transients, good reliability and long life, a high-energy rating, and the ability to fail-safe. Finally, the device would not allow applied transients to exceed the protection voltage—regardless of the device temperature.

In recent years, the introduction of snapback TVS technology by semiconductor companies[1-5] has provided an evolution in transient voltage suppression that brings us closer to this ideal. Unlike traditional TVS diodes, which clamp the voltage at a certain threshold during a surge, the snapback TVS device provides a unique behavior where its clamping voltage drops to a significantly lower “snapback” level once the device begins conducting.
Achieved through advanced semiconductor engineering, this capability ensures better protection for low-voltage components and minimizes the stress on the protected circuitry. And offering a much better clamping ratio than conventional TVS devices, snapback technology provides both clamping and self-resetting characteristics. In contrast, conventional TVSs act more like power Zener diodes.

Snapback TVS devices, whose working principle is rooted in their silicon-based design, react almost instantaneously to transient events. This rapid response ensures that sensitive circuits are shielded from harmful voltage spikes before they can be damaged. The response time is faster than alternative options (see “Protection time” in the table above) and the ability to withstand repetitive transients is limited only by the device’s die temperature—unlike MOVs and GDTs with their wearout mechanisms.

Fig. 1 shows the key parameters of a Taiwan Semiconductor SUPER CLAMP device. This 7700-W, 24-V surface-mount snapback TVS device (model LTD7S24CAH)[5] offers better accuracy and precision than previous semiconductor TVS protection devices. It can pass AEC-Q automotive reliability standards even when used in extremely demanding applications. Snapback TVS technology provides powerful protection in a small form factor, making it suitable for integration into space-constrained designs.

As a low-clamping TVS with snapback characteristics, the LTD7S24CAH provides an extremely low clamping ratio between working voltage (VWM) and clamping voltage (VC). The low clamping ratio TVS can suppress high surge current to provide lower clamping voltage than conventional TVS and MOV devices (Fig. 2).

Fig. 1. Key parameters and package photo for the LTD7S24CAH snapback TVS.[5]

Despite their compact size, snapback TVS devices can handle substantial surge currents, offering robust protection against manmade or naturally occurring high-energy transients.
Fig. 3 shows the behavior distinguishing a snapback TVS device from a conventional bidirectional TVS diode. When a transient voltage surge occurs, the device clamps the voltage to a predetermined threshold. As the current increases, the device enters a “snapback region” where the voltage decreases to a lower, more stable level to provide enhanced protection. As the current approaches zero, the snapback TVS device returns to a high impedance state, resetting for the next transient application.

Fig. 2. When subjected to a transient overvoltage event, a snapback TVS such as Taiwan Semiconductor’s SUPER CLAMP TVS clamps at a lower voltage than a conventional TVS.
Fig. 3. The behavior of a snapback TVS device (gray trace) to a transient surge compared to a traditional TVS diode (red trace).

Because it has a “not to exceed” limit capability, the snapback TVS device obviates the need to overdesign. It allows designers to use lower working voltage components, such as capacitors, switching MOSFETs, reverse polarity protection diodes, and regulators. Additionally, its breakdown voltage (VBR) varies much less over temperature than conventional TVS devices (Fig. 4). This VBR stability vs. temperature helps the designer anticipate voltage range over temperature considerations (i.e., what could happen when…)

Fig. 4. Comparing VBR over temperature for a snapback TVS (SUPER CLAMP) versus a conventional TVS. Over the temperature range shown the VBR characteristic is just 0.17 V/10℃ for the snapback device versus 0.22 V/10℃ for the conventional one.

Application Benefits

As electronics applications of every form continue to shrink in size, the need to meet the requirements of regulatory compliance for EMI qualification, which include transient protection, makes snapback technology a compelling approach. By reducing the voltage excursion during a surge, snapback TVS devices minimize power dissipation across the protected components, preventing damage and increasing system reliability. Eliminating the need for overdesigning, they can enhance design size and weight goals, while passing the qualification testing and increasing survivability in the application.
Many electronics markets can benefit from using snapback TVS protection devices, from automotive (HEV 48-V buses, alternators) and telecom/datacom/networking and EMP protection systems, to industrial process controls, avionics, battery management systems and chargers—any protection application working at 24 V or greater.

Snapback TVS technology is particularly beneficial in applications with low-voltage electronics. Its ability to return—or snap back—to a lower voltage during a surge significantly reduces the risk of overvoltage damage to downstream devices, making it very desirable for use in modern electronics that have shrinking voltage margins. The snapback TVS device can be combined with other protection methods to allow the circuit to keep working in many electrically and environmentally hostile applications.

The snapback TVS technology also helps protect automotive electronics challenged by stringent reliability qualifications and cost pressures. The devices can be used in designs to help pass stringent AEC-Q testing and to survive harsh environments encountered in ICE (internal combustion engine), HEV and full electric vehicles by protecting bus voltages and the application of charging current.

Additionally, snapback technology is well suited for use in industrial equipment, sensors, medical, and process automation systems that must work 24 x 7. In applications, such as factory automation equipment, that must operate reliably in harsh environments where repetitive transients are common, snapback TVS devices are not only more precise, they can also sustain multiple transient fault events and still survive, unlike MOVs and GDTs.

Snapback TVS technology is also instrumental in protecting sensitive communication circuits from transients, including 5G base stations, telecom and networking systems, data transmission lines and other I/Os. Furthermore, it is essential where protection must be validated such as through UL recognition of protection devices used in the application.

Additionally, snapback TVS technology allows lighting applications to meet reliability standards by surviving and continuing to operate in applications where lightning strikes and line transients are frequent occurrences. This capability is highly beneficial in a market typified by long warranties and connections to the ac mains.

One caveat in the application of snapback TVSs is that there is the potential for latchup if the clamping voltage selected is below the working voltage.

Application Example:BLDC Fan Speed Controller

Fig. 5 illustrates how snapback TVS devices offer advantages over conventional TVS approaches when protecting a single-bridge BLDC (brushless direct current) fan speed controller. In this application example, the low VC of the snapback TVS device helps protect the motor controller and other components with lower voltage stress. Compared with using a conventional TVS or other alternatives, it also has greater power density and results in less overdesign. Table 2 lists the ratings of devices that would be applied at different supply voltages and assumes use of a snapback TVS for both D4 and D2.

Consider the case described for the 24-V supply voltage. In this case the clamping voltage of the snapback TVS is just 26 V for D4, whereas in the case of a conventional TVS it would typically be 35 V.

Fig. 5. The snapback TVS device in a BLDC fan-speed controller design. While a snapback TVS would typically be used for D4 to protect the supply voltage from input transients, it could also be used for D2 to limit back EMF.
Table 2. Voltage ratings of discrete power devices in the fan speed controller circuit.

Conclusion

Its unique ability to combine low clamping voltage with robust surge-handling capacity positions the snapback TVS device as an essential component in modern electronic designs. Whether in consumer gadgets, industrial machinery or automotive systems, snapback TVS devices are set to play a crucial role in ensuring the safety and reliability of next-generation electronics of all types.
As electronic devices become more sophisticated and sensitive due to VLSI geometry reductions and other low-voltage IC methods, the demand for this advanced circuit protection technology will continue to grow. Research and development in this field are likely to focus on further reducing clamping voltage, increasing surge-handling capability, and enhancing integration into multi-functional protective components.

 

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Kevin Parmenter

Taiwan Semiconductor
Director of Field Applications Engineering North America

kevin.parmenter@tscus.com

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Super Clamp TVS – Solution with an extremely low clamping ratio https://web.ts.com.tw/en/blog-super-clamp-tvs-introduction/?utm_source=rss&utm_medium=rss&utm_campaign=blog-super-clamp-tvs-introduction https://web.ts.com.tw/en/blog-super-clamp-tvs-introduction/#respond Fri, 14 Feb 2025 02:41:36 +0000 https://web.ts.com.tw/en/?p=17403 Taiwan semiconductor introduces, first of its kind, transient voltage suppressor (TVS) called Super Clamp TVS. Super Clamp TVS adopts snapback characteristics which is beneficial to extremely low clamping ratio between working voltage (VWM) and clamping voltage (VC). The low clamping ratio TVS can suppress high surge current to provide lower clamping voltage than conventional TVS …

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Taiwan semiconductor introduces, first of its kind, transient voltage suppressor (TVS) called Super Clamp TVS.

Super Clamp TVS adopts snapback characteristics which is beneficial to extremely low clamping ratio between working voltage (VWM) and clamping voltage (VC). The low clamping ratio TVS can suppress high surge current to provide lower clamping voltage than conventional TVS and metal oxide varistor (MOV), which means designer could use lower working voltage components of capacitor, switching MOSFET, reverse polarity protection diodes, and regulators.

Super Clamp TVS breakdown voltage (VBR) difference of temperature deviation is lower than conventional TVS. This VBR stability by temperature variation helps designer anticipate voltage range when adding in temperature consideration.

Super Clamp TVS structure

Super Clamp TVS adopts BJT (Bipolar junction transistor) which is different from conventional TVS as shown in Figure 1. When breakdown voltage occurs for Super Clamp TVS, due to its instinctive snapback characteristics, it foldbacks and then breakdown happens again. This low clamp ratio provides lower VC (clamping voltage) at high IPP (peak impulse current), which means the discrete components, which come after the Super Clamp TVS, could sustain lower voltage stress and designer could use lower working voltage specification components like capacitor, MOSFET etc.

 Conventional TVS and Super Clamp TVS structure, VC – IPP curve

TSC high power DO-218AB package Super Clamp TVS specification:

Fan Single phase H-bridge BLDC motor usage component

Comparison

In order to understand Super Clamp TVS characteristics and advantages over conventional TVS, take DO-218AB package bi-directional Super Clamp TVS LTD7S24CAH of TaiwanSemi and DO-218AB package uni-directional conventional TVS TLD8S24AH of TaiwanSemi to do the comparison.

8/20us I-V curve comparison

Taking Super Clamp TVS LTD7S24CAH and conventional TVS TLD8S24AH to test 8/20us transient surge and recording VC – IPP waveform as shown in Figure 2. LTD7S24CAH curve shows snapback characteristics whose VC clamping ratio is 1.63 (VC/VWM) and Rdny is 0.0058 ohm, which are lower than those of TLD8S24AH. TLD8S24AH curve shows exponential characteristics and whose VC clamping ratio is 3.78 (VC/VWM) and Rdny is 0.0224 ohm. Super Clamp TVS can suppress transient surge closer to VBR than conventional TVS.

Super Clamp TVS LTD7S24CAH and conventional TVS TLD8S24AH 8/20us I-V curve

VC tested by 8/20us IPP comparison

Taking Super Clamp TVS LTD7S24CAH and conventional TVS TLD8S24AH to test 8/20us transient surge. Applying 8/20us of IPP=155A to these two TVS and recording VC results as in Figure 3. LTD7S24CAH VC (23.623V) is 76.56% of TLD8S24A VC (30.853V).

Super Clamp TVS LTD7S24CAH and conventional TVS TLD8S24AH tested 8/20u IPP=155A

10/1000us I-V curve comparison

Taking Super Clamp TVS LTD7S24CAH and conventional TVS TLD8S24AH to test 10/1000us transient surge and recording VC – IPP waveform as shown in Figure 4. LTD7S24CAH curve shows snapback characteristics whose VC clamping ratio is 1.049 (VC/VWM) and Rdny is 0.0075 ohm, which are lower than those of TLD8S24AH. TLD8S24AH curve shows exponential characteristics whose VC clamping ratio is 1.349 (VC/VWM) and Rdny is 0.0234 ohm. Super Clamp TVS can suppress transient surge closer to VBR than conventional TVS.

Super Clamp TVS LTD7S24CAH and conventional TVS TLD8S24AH 10/1000us I-V curve

Device VBR temperature deviation comparison

VBR will be a focus point for a designer if TVS inadequately turns on when temperature is increasing. Taking Super Clamp TVS LTD7S24CAH and conventional TVS TLD8S24AH to test VBR in temperature range -55⁰C to 175⁰C as shown in Figure 8. For LTD7S24CA, when operating in temperature range -55⁰C to 175⁰C, VBR deviation difference is 2.73V; For TLD8S24A, when operating in temperature range -55⁰C to 175⁰C, VBR deviation difference is 5.58V. So, for LTD7S24CA VBR difference of temperature deviation is more stable than TLD8S24A.

LTD7S24CAH VBR temperature variation is lower than TLD8S24AH

Potential application example– BLDC FAN

 

Back-EMF threat

24V industry Fan uses Single phase H-bridge BLDC motor circuit as shown in Figure 6. The motor exhibits Back-EMF (Back Electromotive Force) when in operation. When current flows through motor, Back-EMF will flow to voltage source while motor decelerates or stops and it might damage front components like MOSFET.

Single phase H-bridge BLDC motor circuit

Advantage

Normally the components selection for industry Fan Single phase H-bridge BLDC motor needs to consider Back-EMF robustness as shown in Table 2. 24V motor will have 60V Back-EMF threat and it will use TVS with VBR=28V to clamp this Back-EMF to 33V for protecting the 60V MOSFET. If it adopts Super Clamp TVS LTD7S24CAH, it could clamp Back-EMF to 25V. That brings benefits: 60V MOSFET may exchange to 40V MOSFET and 50V Capacitance may exchange to 35V Capacitance.

Fan Single phase H-bridge BLDC motor usage component

Though it is completely dependent on end application, a general estimate for BOM cost reduction can be estimated from below table.

Fan Single phase H-bridge BLDC motor usage component

Conclusion

Super Clamp TVS adopts snapback technology and its low VC could help protect discrete components sustain lower voltage stress, based on application design, compared to conventional TVS. That helps downsizing components rating and eventually BOM cost reduction.

 

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Muhammad Ahad Rafiq

Taiwan Semiconductor
Senior Field Application Engineer


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IGBT, MOSFET and GaN: An Overview of Efficiency, Power and System Cost for Inverter Design https://web.ts.com.tw/en/blog-igbt-mosfet-gan/?utm_source=rss&utm_medium=rss&utm_campaign=blog-igbt-mosfet-gan https://web.ts.com.tw/en/blog-igbt-mosfet-gan/#respond Mon, 14 Oct 2024 08:12:56 +0000 https://web.ts.com.tw/en/?p=16778 Extending from a simple Low Power home appliance to complex and intricate application for Electric Vehicles (EVs), Power Conversion has always been the recurring chapter when it comes to System Design. The designers have always been tasked to engineer the solution which revolves around better efficiency, high delivered power and reduced system cost. From DC/DC …

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Extending from a simple Low Power home appliance to complex and intricate application for Electric Vehicles (EVs), Power Conversion has always been the recurring chapter when it comes to System Design. The designers have always been tasked to engineer the solution which revolves around better efficiency, high delivered power and reduced system cost. From DC/DC Converters- Buck or Boost to DC/AC Inverters these parameters play an important role in defining the selection of discrete components for the design.

Inverters have been the part of power conversion in system design since the 1950s, however, their use in power applications have grown exponentially from 1980 and onwards with the main function of converting Direct Current (DC) electricity to Alternating Current (AC) electricity. Inverters were primarily tasked with controlling the rotational speed of the motor but as the industrial sector grew, their use became essential for industrial infrastructure. Over time their requirement continues to expand in the automotive and industrial sectors at an exponential pace.

To understand the inverter and the role of IGBT, MOSFET and GaN, let’s dive in to the basic design of a H-Bridge based single-phase inverter.

As depicted in the block diagram, IGBTs, MOSFETs or GaNs are mainly employed as a “Switching Component” and considered a basic building block of the inverter. A PWM or SPWM based input signal is generated using a Microcontroller which controls ON/OFF state of IGBTs/MOSFETs/GaNs.

When it comes to defining the right component for the design, there are key parameters that needs to be analyzed. Two major design specifications which would come into play are Peak Power and Switching Frequency. As a general rule, the higher the Peak Power, the lower would be the Maximum Switching Frequency of the circuit.

For example, have a look at the graph below. IGBTs provide highest peak power but on the other hand the designer is restricted to lower maximum switching frequency as compared to MOSFETs and GaN.

Figure 1: Power and Frequency Overview Taken from ElectronicDesign.Com

There are numerous applications in which IGBTs have found their potential use (High Voltage and High Current applications) since the designed Peak Power Requirements are exceeding 250kW. For example, High Power Inverter for Centrifuge in Industrial Sector, Motor Control of a Wind Tunnel for Aerodynamic Applications, and Motor Drive Control System in Automotive Sector. In applications where Peak Power requirement is higher, IGBTs would be the perfect choice.

The next design requirement which defines the selection of a device is Switching Frequency. To make a better comparison between the selection of IGBTs, MOSFETs and GaN in an inverter, let’s assume a design requirement of peak power up to 10kW-20kW (Mid-Range Inverter). This region of Peak Power is an overlapping area between IGBTs, MOSFETs and GaN, since all of these devices are capable to handle this power.

After defining the power requirements, the designer then selects the switching frequency of the application which would then determine the selection of the component. The question now arises which Switching Frequency should be opted? To answer this question better, let’s have a look at some of the key design parameters that are impacted by Switching Frequency.

a. Power Losses- Switching Losses
One of the key concerns that a designer has to deal with is to reduce the power losses and switching losses in high-efficiency applications. Switching losses are directly proportional to switching frequency i.e. Higher the frequency, higher would be the losses associated with it.

The factor that contributes to overall power dissipation is the extra “Internal (On) Resistance” the circuit has to face. This Internal (On) Resistance of the switching component is known as On Resistance (RdsOn). The higher the RdsOn, the higher would be the power dissipated. Usually, the devices having higher RdsOn have lower current ratings (IdMax) if the Drain to Source Voltage is kept constant (devices having similar Voltage Ratings in the same package)

b. Harmonics
Losses that occur due to harmonics have also a major impact on the efficiency of the system. Harmonics are usually the multiple of the fundamental switching frequency that are generated due to non-linear switching components. The effect of these distortions can cause major damage to the components hence decreasing components’ life (premature aging). However, the amplitude of these harmonics is inversely associated with the switching frequency. The higher the switching frequency, the lower would be the effect of Harmonics.

The applications like Solar Inverters and Traction Inverters where it is vital to have lower losses and increased efficiency it is better to use the component that has lower Internal (On) Resistance (RdsOn) and supports higher switching frequency. In this case, GaN would be a better fit. MOSFET or Silicon Carbide MOSFET would take the second place since MOSFETs can handle higher switching frequencies as compared to IGBTs.

Let’s have a look at some of the other key parameters that can influence the selection of a switching component based on the design requirements.

Power Density and Thermal Stability
GaN devices have better numbers of power density as compared to IGBTs and MOSFETs. They are capable of delivering more power and fewer losses while being in a compact package which enables designers to make more compact Printed Circuit Boards (PCBs) for Inverters.

The key factors that contribute to thermal performance are Internal (On) Resistance (RdsOn), Gate Charge (Qg) and Junction-Gate Capacitance. The overall power dissipation caused by these parameters is directly linked to the thermal behaviour (Heat Dissipation) of the device. The higher the values, more would be the dissipated power which would contribute to higher temperatures. From the experiments and available literature, it has now been established that GaN devices offer approximately 80% less power losses as compared to IGBTs and MOSFETs while providing approximately two times the power density in the same form factor.

Efficiency and Figure of Merit:
As discussed above, there are some inverter applications in which Efficiency is considered the “most important” parameter. Since it is the ratio of the delivered power to the input power, all the effort is put in to maximizing the output to achieve better efficiency in such inverter applications.

While designing an efficient inverter, some internal parameters like Internal (On) Resistance (RdsOn) and Gate Charge should also be kept in mind. These two parameters are used for the calculation of FOM (Figure of Merit), which directly influences the overall efficiency of the design. The Better the FOM, better would be the efficiency.

FOM = On Resistance (RdsOn) x Gate Charge (Qg)

In the same Voltage range, GaN and MOSFETs provide better FOM as compared to IGBTs.

BOM Cost:
There are various technical features that add to the BOM cost of the application.

  • Complex Cooling
    Due to high Internal (On) Resistance, heating can be a major issue in Inverters which contributes to thermal instability. To counter this problem heat sinks additional cooling is employed in mid-range to high power Inverters to ventilate extra heat, contributing to an additional BOM cost. Generally, Cooling requirements are quite low in GaN devices since they do not tend to overheat because of high electron mobility, thermal stability and efficiency.
  • Output Filters and Magnetic Components
    Filters are used to stabilize the output and block certain frequencies of the inverter. They are designed using magnetic components (Capacitors and Inductors) and employed to reconstruct the PWM and SPWM signals at the Inverter Output. For higher frequencies small output filters (Small Values of Inductances and Capacitances) are required as compared to low frequencies. This would also affect the size of the PCB and add to the BOM Cost.

    With GaN devices small output filters are required to stabilize the output (since they are used in high-frequency applications). In the case of IGBTs (lower frequencies), powerful output filters with higher specifications are required which add to the BOM cost.

  • Efficiency of the other Components
    In high-power systems, the distortions caused by harmonics and overheating generated in the circuit can cause pre-mature aging of the components. The overall efficiency of the component will decrease over time making it unsuitable for application use and hence needs replacement in the long run. Replacing a failed component takes time, effort and additional BOM Cost.

The qualitative overview of IGBTs, MOSFETs or GaN in inverter applications is shown in the matrix below. This comprehensive overview of strengths and weaknesses can help to identify application-specific performance parameters when considering them in a design.

IGBTs, MOSFETs and GaNs have their advantages and disadvantages. In short, no switching device could be deemed as “the best” solution for every application. As discussed, High Current applications would find IGBTs as a perfect fit, however when there is a mid-range (10kW and above) power requirement, MOSFETs and GaNs would be a better choice for their reduced power losses. It is always a compromise between Peak Power, Switching Frequency, Efficiency and BOM Cost which a designer has to evaluate and find the most reliable solution for the target application.

 

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 Salman Talat 

Taiwan Semiconductor
Senior Field Application Engineer

salman.talat@tsceu.com

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Power Components for On-Board Chargers (OBC): A Comprehensive Overview https://web.ts.com.tw/en/blog-obc/?utm_source=rss&utm_medium=rss&utm_campaign=blog-obc https://web.ts.com.tw/en/blog-obc/#respond Tue, 24 Sep 2024 02:07:55 +0000 https://web.ts.com.tw/en/?p=16384 Introduction The electric vehicle (EV) market is experiencing rapid growth, providing a more environmentally friendly mode of transportation. While traditional vehicles require gasoline from gas stations, EVs simply need to be plugged into a charging station to recharge their batteries. The on-board charger (OBC) is a critical component installed in EVs. It converts external AC …

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Introduction

The electric vehicle (EV) market is experiencing rapid growth, providing a more environmentally friendly mode of transportation. While traditional vehicles require gasoline from gas stations, EVs simply need to be plugged into a charging station to recharge their batteries.

The on-board charger (OBC) is a critical component installed in EVs. It converts external AC power from the charging station into DC power (output voltage varies based on the EV’s battery specifications) to charge the battery. If the charging station provides DC power, this conversion step is bypassed, and the DC power is directly connected to the vehicle battery.

Diagram of Electric Vehicle Charging

On-Board Charger (OBC)

The OBC is capable of regulating the charging current and voltage for EV charging. It consists of a power factor correction (PFC) circuit, a DC-DC converter, an auxiliary power supply, and a control/drive circuit. To ensure vehicle safety and reliability, its components must withstand overload, transient voltage, and high temperature conditions.

The OBC provides high voltage to the lithium battery by regulating single-phase AC 110/220V or three-phase AC 400V through PFC and DC/DC. Depending on the charging power, the range is from single-phase 3.6kW to three-phase 22kW.

OBC Circuit Diagram

Taiwan Semiconductor provides the OBC with power components such as a bridge rectifier, ultra-fast recovery rectifier, Schottky diode, and MOSFET.

AC/DC PFC (Interleaved Power Factor Corrector) PFC is a circuit that improves the power factor at the power supply end. When the phase of the input voltage and current is inconsistent, power is lost during power transmission. PFC acts as a voltage-current regulator, ensuring that the input AC current and input AC voltage reach the same phase, thus using energy more efficiently.

ACDC PFC diagram

After the adjusted current passes through Q1 and Q2 (MOSFET) in the following figure, it can drive the gate driver to operate.

ACDC PFC circuit diagram

Isolation Gate Drive The isolation gate driver can be used for high-voltage PFC and DC-DC converters. Its isolation feature supports driving larger drives, providing a safety gate and integrated protection functions. MOSFET, a common switching component, offers the advantage of fast switching speed. When current flows through, the isolation gate driver connects diodes (D1 to D7 in the following figure) to adjust the switching state of the MOSFET (Q1 to Q6). Using MOSFETs as switches can reduce losses and provide isolation to protect low-voltage circuits, ensuring safety and noise immunity.

Isolation Gate Drive circuit diagram

Silicon Carbide (SiC) Diode/MOSFET In power electronics, a significant portion of the overall power loss comes from switching during the on-off state. Each switching process causes losses, so when selecting components, shorter switching transition times are preferred to minimize losses. General diodes have a larger reverse recovery current, while SiC has the advantages of low reverse recovery current and short reverse recovery time, which can minimize related energy losses and improve power efficiency. SiC MOSFET and SiC Schottky diode are switching devices that provide a better solution for on-board chargers.

SiC material has high breakdown voltage characteristics

Power loss

Integrated OBC+DC/DC OBC integrated with DC/DC is called an integrated DC power module and bidirectional on-board charger. The DC/DC can step down the high input voltage to the vehicle battery voltage. Integrated OBC+DC/DC shares power switches and control units, reducing the number of switches, magnetic components, and energy consumption in the power circuit, thereby improving power density, increasing stability, and reducing cost, weight, and size. Through miniaturized battery modules, it helps to reduce the size and weight of electric vehicles and can accommodate higher battery capacities to extend driving range.

Integrated OBC+DCDC

Bidirectional On-Board Charger With the growing demand for electric vehicles, automotive components are constantly evolving to improve system efficiency. Traditional unidirectional on-board charging (grid to battery) has also evolved into bidirectional on-board charging (battery to load/grid), making full use of the space in electric vehicles and reducing weight. Bidirectional OBC can supply power to electronic devices inside and outside the vehicle. For example, when camping outdoors and wanting to watch a movie, you can connect the plug to the OBC as a power source, or even charge your phone and Bluetooth speaker.

Bidirectional On-Board Charger
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Sensor Fusion for Supplementary Restraint Systems (SRS) https://web.ts.com.tw/en/blog-srs/?utm_source=rss&utm_medium=rss&utm_campaign=blog-srs https://web.ts.com.tw/en/blog-srs/#respond Mon, 23 Sep 2024 07:46:08 +0000 https://web.ts.com.tw/en/?p=16433 Supplementary Restraint Systems, (SRS), more commonly known as airbag systems, have been a standard feature in vehicles for over 40 years. These have evolved from simple frontal airbags to more comprehensive systems that include side curtain airbags and knee airbags. As a critical component of vehicle safety, the airbag control unit (ACU) plays a pivotal …

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Supplementary Restraint Systems, (SRS), more commonly known as airbag systems, have been a standard feature in vehicles for over 40 years. These have evolved from simple frontal airbags to more comprehensive systems that include side curtain airbags and knee airbags. As a critical component of vehicle safety, the airbag control unit (ACU) plays a pivotal role in determining when to deploy the airbags.

The ACU receives electronic signals from various sensors, including impact sensors and accelerometers, which monitor the vehicle’s speed, acceleration, and other physical parameters. When these parameters exceed predefined thresholds, the ACU initiates the deployment of the airbags by igniting the gas generator within the airbag module.

Impact sensors are categorized into triggering and protective types based on their structure and function. Triggering sensors, which can be electromechanical or mechanical, detect collisions and send signals to the ACU to initiate airbag deployment. Protective sensors, often electronic, work in conjunction with triggering sensors to prevent accidental airbag deployment. They typically use strain gauges or voltage-sensitive devices to measure the force of an impact and determine if it is severe enough to warrant airbag deployment.

The signal transmission between impact sensors, the ACU, and the airbag module must be dependable and precisely timed, especially in the event of a collision. TVS diodes and backup power supplies, typically capacitors, are essential for protecting the system from voltage spikes and ensuring continuous operation.

As vehicles become increasingly electrified, the electrical systems within them become more complex. To protect these systems from voltage transients caused the switching of electrical loads or the impact compromising wiring in the vehicle, TVS diodes are used to clamp overvoltage’s and MOSFETs are used to quickly switch between the main power supply and the backup power supply.

SRS circuit diagram

With the advent of electric vehicles, airbag systems have become even more sophisticated. ACUs can now be updated with new software and can utilize cameras to monitor the vehicle’s interior and occupants, allowing for more precise and tailored airbag deployment. As a result, the demand for robust and reliable electronic components, such as those offered by Taiwan Semiconductor, has increased.

Taiwan Semiconductor’s automotive-grade products, including MOSFETs and TVS diodes, comply with the AEC-Q101 standard, are PPAP able and meet the requirements of automotive testing standards such as ISO 7637-2, ISO 10650, and ISO 16750-2. These components play a vital role in ensuring the safety and reliability of modern airbag systems.

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MOSFETs and Diodes: Key Components in Reverse Polarity Protection https://web.ts.com.tw/en/blog-protection/?utm_source=rss&utm_medium=rss&utm_campaign=blog-protection https://web.ts.com.tw/en/blog-protection/#respond Mon, 23 Sep 2024 07:45:27 +0000 https://web.ts.com.tw/en/?p=16418 According to the latest research, the automotive industry is estimated for a significant shift. By 2025, the value of electronic components in high-end vehicles is projected to surpass $6000, driven by the increasing sophistication of vehicle features. This trend is expected to accelerate if the EU successfully bans the sale of internal combustion engine vehicles …

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According to the latest research, the automotive industry is estimated for a significant shift. By 2025, the value of electronic components in high-end vehicles is projected to surpass $6000, driven by the increasing sophistication of vehicle features. This trend is expected to accelerate if the EU successfully bans the sale of internal combustion engine vehicles by 2035, leading to an even higher proportion of electronic components in electric vehicles.

Despite the technological advancements in electric vehicles, the demand for robust and reliable automotive electronic components remains paramount. The failure of electronic control systems during driving can pose serious safety risks to passengers.

A critical component in the vehicle’s electrical system is the reverse polarity protection circuit. This circuit safeguards the battery and other sensitive electronic components from damage caused by reverse current, which can occur due to human error, external forces, or environmental factors. The ISO-16750-2 4.7 standard outlines specific safety requirements for transient reverse voltage testing.

One common design for reverse polarity protection circuits involves a series diode. While this method is simple, it results in significant power dissipation due to the voltage drop across the diode. For higher-power applications, MOSFETs are used to reduce power losses. Figures 2 and 3 illustrate the use of P-channel and N-channel MOSFETs, respectively. Although MOSFETs offer improved efficiency, they typically require more space and increase overall design costs.

When a battery applies reverse polarity, the diode becomes reverse biased, preventing current flow. Similarly, in MOSFET-based circuits, a reverse input voltage causes the MOSFET channel to close, effectively blocking the current.

Protection-diode
Protection-PMOS
Protection-NMOS

Beyond reverse voltage, numerous devices, motors, relays, and wiring harnesses within vehicles can generate voltage spikes of several hundred volts due to the inherent inductance, stored energy will be applied to the rest of the system.

Additionally, static electricity often occurs in vehicles, and electrostatic transient voltage can reach thousands of volts. Since these transient voltages exceed the transient voltage tolerance of diodes, MOSFETs, and the system, TVS diodes are used in the protection circuit design to prevent these devices from being damaged by transient voltages. According to the relative position of the reverse polarity protection device, as shown in the figure, unidirectional or bidirectional TVS are used for negative polarity protection.

In automotive systems, having both TVS diodes and reverse polarity protection provides the system with protection against transient voltage and damage caused by incorrect battery installation. It also meets the safety standards for automotive-specific testing.

Unidirectional TVS
Bidirectional TVS

Taiwan Semiconductor’s automotive TVS devices fully comply with the AEC-Q101 standard are PPAP able and meet the specific automotive testing standards ISO 7637-2 (1-3b), ISO 650, and ISO 16750-2. Additionally, Taiwan Semiconductor can provide customers with AEC-Q101 qualified diodes, MOSFETs, and Zener diodes for protection device applications.

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Advanced LED Solutions for Enhanced Vehicle Visibility https://web.ts.com.tw/en/blog-led/?utm_source=rss&utm_medium=rss&utm_campaign=blog-led https://web.ts.com.tw/en/blog-led/#respond Mon, 23 Sep 2024 06:05:08 +0000 https://web.ts.com.tw/en/?p=16339 Automotive lighting plays a crucial role in ensuring road safety. Adequate lighting, especially during nighttime driving, enhances visibility and provides drivers with a clear view of the road. LEDs (Light Emitting Diodes), which convert electrical energy into light, have become the preferred choice for automotive lighting due to their numerous advantages, including low power consumption, …

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Automotive lighting plays a crucial role in ensuring road safety. Adequate lighting, especially during nighttime driving, enhances visibility and provides drivers with a clear view of the road.

LEDs (Light Emitting Diodes), which convert electrical energy into light, have become the preferred choice for automotive lighting due to their numerous advantages, including low power consumption, long lifespan, high luminous efficiency, and environmental friendliness. LEDs find extensive applications in various automotive systems, and with the rapid growth of intelligent lighting, they can be broadly categorized into front and rear lighting. Front lighting includes headlights and fog lights, while rear lighting encompasses taillights, brake lights, reverse lights, and turn signals.

Headlights/Fog Lights

Protection Device: During the installation or repair of a vehicle, reverse connection of the car’s power supply can easily damage the vehicle’s controller due to reverse voltage. To address this issue, automotive regulations have introduced requirements for reverse polarity protection. This protection circuit primarily consists of diodes, TVS diodes, and MOSFETs.

DC/DC Converter: Headlights and fog lights, being high-power automotive lighting components, often utilize DC/DC converters to improve system conversion efficiency. Three common types of DC/DC converters used in automotive lighting are buck converters, boost converters, and buck-boost converters. The basic structure diagram is as follows:

buck converter
boost converter
Buck-boost converter

By rapidly switching the energy storage inductor, MOSFET, and Schottky diode, LED current is supplied. Regarding LED headlights, different automakers and vehicle models employ varying designs for their turning headlights. Traditional LED headlights often adopt a single-stage converter architecture (such as a buck converter), while newer matrix LED headlights tend to utilize a two-stage converter architecture (such as boost + buck).

Single-stage DC/DC converter
Two-stage DC/DC converter architecture (for matrix-type headlamp applications)

Taillights, brake lights, turn signals, and interior lights

Linear Driver A linear driver operates similarly to a low-dropout regulator (LDO), primarily providing a constant current to LEDs. While it offers lower efficiency, it is commonly used in low-power LED applications such as taillights, brake lights, turn signals, and interior lighting.

Due to the absence of high-frequency and high-power components, linear drivers do not suffer from electromagnetic interference (EMI) issues, simplifying the control board circuitry. Small-area applications like interior lighting often employ single-channel LED linear drivers, while larger-area lighting such as taillights and turn signals utilize multi-channel LED linear drivers to enable multi-functional applications.

Single-channel linear LED driver
Multi-channel linear LED driver

We provide solutions for protection devices, converters, and linear drivers.

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Battery management system (BMS): Protecting and Managing Your Electric Vehicle https://web.ts.com.tw/en/blog-bms/?utm_source=rss&utm_medium=rss&utm_campaign=blog-bms https://web.ts.com.tw/en/blog-bms/#respond Mon, 19 Aug 2024 06:10:32 +0000 https://web.ts.com.tw/en/?p=16321 Did you know that electric vehicles actually predate gasoline-powered cars? While there’s some debate about whether the first electric vehicle was invented in 1832 or 1881, it’s clear that it came before Karl Benz introduced the first gasoline-powered car in 1886. In fact, electric and gasoline cars were neck and neck in popularity around the …

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Did you know that electric vehicles actually predate gasoline-powered cars? While there’s some debate about whether the first electric vehicle was invented in 1832 or 1881, it’s clear that it came before Karl Benz introduced the first gasoline-powered car in 1886. In fact, electric and gasoline cars were neck and neck in popularity around the early 1900s. However, the rise of the petroleum industry in the 1920s made gasoline significantly cheaper, and the internal combustion engine has dominated the automotive industry ever since. Electric vehicles became a mere footnote in automotive history.

The Importance of BMS

Despite this, electricity remains a crucial component of modern vehicles. In electric vehicles, power management is even more critical. If the battery is the heart of an electric vehicle, then the Battery Management System (BMS) is its brain. The BMS controls and monitors the electric vehicle’s power, ensuring optimal battery performance, longevity, efficiency, and most importantly, safety. It monitors the battery system to prevent issues like overcharging, over-discharging, and short circuits.

An electric vehicle’s power comes from a high-voltage lithium-ion battery pack composed of numerous cells connected in series and parallel. This battery can be charged directly using a DC fast charger or indirectly using an AC charger and the vehicle’s on-board charger (OBC), which converts AC power to DC power. The high-voltage battery can directly power high-voltage components like the motor inverter or air conditioning inverter, or it can be converted to 12V by an auxiliary power module (APM) to power lower-voltage components like the vehicle’s computer, lights, and wipers.

To protect the high-voltage battery from damage, the BMS, which includes components like transient voltage suppressors (TVS) and diodes, manages charging and discharging, selects power sources, and monitors and protects the battery system.

Different charging methods for electric vehicles: AC vs. DC

BMS Architecture

Typically, a BMS consists of a control module and a measurement module: an analog front-end (AFE), a microcontroller unit (MCU), and a gauge (see figure). The gauge can be a separate IC or integrated within the MCU.

The AFE’s function is to balance the energy of individual lithium-ion cells and provide voltage, temperature, and current readings from the battery to the MCU and gauge. The gauge obtains readings from the AFE and then uses complex battery modeling and advanced algorithms to estimate critical parameters such as State of Charge (SoC) and State of Health (SoH).

The MCU is the core component of the BMS. It connects to the system and receives information from the AFE and gauge. As the BMS needs to prevent the vehicle’s battery from overheating due to overcharge or over-discharge, leading to fire or explosion, the MCU will quickly transmit a signal to the relay when there is an anomaly, controlling whether the current in the entire circuit is working normally or is cut off.

High voltage BMS structure diagram

For low-voltage BMS architectures in applications like electric motorcycles and golf carts, where system currents are relatively low, the relay structure is often replaced with a back-to-back N-channel MOSFET configuration for charge and discharge protection. To minimize power losses in the circuit during operation, MOSFETs with low on-resistance (RDS(on)) are selected to protect the battery while achieving low power dissipation and improving circuit conversion efficiency, ensuring stable power supply.

The AFE module’s operating power typically comes from the managed lithium-ion battery. Due to occasional transient voltage spikes on the lithium-ion battery line, a TVS (Transient Voltage Suppressor) is added to both the control circuit and the lithium-ion cell to prevent damage to the control circuit. When a transient voltage occurs, the excess energy is dissipated through the TVS, protecting the acquisition module.

The power supply for the MCU and gauge modules primarily comes from the vehicle’s 12V battery. A TVS and a reverse protection diode are added to the front end of the power supply to meet safety regulations.

Low voltage BMS structure diagram

Taiwan Semiconductor offers a comprehensive range of components, including TVS, Zener diodes, and MOSFETs, to support your BMS and ensure optimal vehicle power management.

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Beyond Braking: Advanced Driver Assistance Systems (ADAS) for a Safer Driving Experience https://web.ts.com.tw/en/blog-adas/?utm_source=rss&utm_medium=rss&utm_campaign=blog-adas https://web.ts.com.tw/en/blog-adas/#respond Mon, 19 Aug 2024 03:47:02 +0000 https://web.ts.com.tw/en/?p=16243 In the history of automotive development, aside from the evolution of power output, the most significant investment in research and development has been dedicated to providing drivers and passengers with more comprehensive safety protection. Initially, this focused on passive safety features such as airbags, seatbelts, and crumple zone design. With the rapid advancement from microcomputers …

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In the history of automotive development, aside from the evolution of power output, the most significant investment in research and development has been dedicated to providing drivers and passengers with more comprehensive safety protection. Initially, this focused on passive safety features such as airbags, seatbelts, and crumple zone design. With the rapid advancement from microcomputers to automotive computers, the focus shifted to active safety design, giving rise to the concept of Advanced Driver Assistance Systems (ADAS).

While ADAS features like Anti-lock Braking Systems (ABS) have been around for a longer time, the concept of driver assistance has been applied for even longer. As early as 1995, BMW introduced the Park Distance Control (PDC) system in the E38 model, which used ultrasonic signals to help drivers understand the distance between the vehicle and front and rear obstacles during parking, preventing collisions. This marked the beginning of the development of systems that actively influence driver control based on detected vehicle environment data.

Modern ADAS systems are generally divided into three parts: sensors, processors, and actuators. First, sensors such as cameras, radar, ultrasonic sensors, and even more expensive LiDAR are used to measure the distribution of the vehicle’s surrounding environment using light, images, and sound waves. These sensors are typically installed on the front and rear bumpers, windshield, and side mirrors, with the number of sensors depending on the vehicle’s ADAS configuration. According to the SAE International standard, the lowest level, Level 0, has no automated driving functions and only provides driving assistance information. For example, the commonly used Around View Monitoring (AVM) system only requires the installation of cameras and short-range radar.

ADAS is not synonymous with autonomous driving but is a prerequisite for achieving it. Processors and actuators play a crucial role in self-driving technology at Level 1 and above. In addition to displaying the sensor data for driver reference, the data is also transmitted to the processor, where the Electronic Control Unit (ECU) analyzes it and makes decisions, which are then transmitted to the actuators to control the throttle and steering wheel, enabling partial or fully automated vehicle control. For example, the Level 2 Automatic Parking Assist (APA) system only requires the driver to control the throttle, while the actuator operates the steering wheel.

Market sales data and public information show that Level 1 and Level 2 self-driving technologies will remain the mainstream for the next five years. Cameras and ultrasonic sensors are the primary components. Although cameras rely on software to simulate human visual perception to judge the environment, they are susceptible to weather and light conditions. However, compared to radar and LiDAR, cameras are less expensive and can be installed at multiple angles on the vehicle to obtain a complete view of the environment, making them the current mainstream configuration for ADAS.

Cameras provide image information and are therefore called image sensors (CIS: CMOS Image Sensor). The captured color image is divided into red, green, and blue pixels by a filter and enters the CIS. The CIS, based on its resolution and pixel design, has a corresponding matrix. Each pixel is a photodiode. When a photodiode receives light, it is converted into an electrical signal, which is transmitted through CMOS switches as an analog signal to the next component, the analog front-end (AFE), where it is converted into a digital signal and then processed by an image signal processor (ISP) to generate an image, which is then transmitted to the processor SoC (System on Chip) for calculation, judgment, prediction, and even learning. The conversion from analog to digital signals requires extremely fast speed and low interference, allowing the SoC to accurately interpret the data in real-time and provide the necessary parameters for the backend actuator to operate, assisting the vehicle in steering and power system driving.

CMOS Image Sensor and Signal Processing

With the rapid development of ADAS, there is a need for stable and fast electronic signal transmission. As the amount of information transmitted increases, more power is required. Since ADAS has multiple processors, such as PCIE Switch, Security ECU, etc., to avoid interference between different controllers when problems occur, each processor requires a separate power supply. Additionally, to meet the requirements of down-conversion and reducing electromagnetic interference (EMI) within a limited space, power supply circuits often use Power Management ICs (PMICs), which integrate DC/DC converters and low dropout regulators (LDOs) and have a smaller footprint. For example, as mentioned earlier, if the CMOS image sensor encounters problems with image acquisition due to freezing at low temperatures, a heater is used to heat the CMOS sensor, and the power for the heater needs to be provided by a boost converter. The boost converter uses MOSFETs as switching elements.

ADAS Scale

MOSFETs offer advantages such as fast switching speed, low power consumption, and high efficiency, making them ideal for ABS systems. They can quickly switch the pressure in the brake hydraulic system to adapt to changes in vehicle braking needs. Additionally, MOSFETs can effectively handle high currents and high-temperature environments, which is particularly important in automotive ABS systems.

The solenoid in the brake hydraulic valve body is controlled by the MCU in the ECU. In addition to the main control MOSFET, there are also freewheeling diodes used to protect the solenoid coil and control the application circuit. During braking, when the solenoid is energized, current flows through the solenoid coil, causing the valve to open and allowing hydraulic pressure to enter the valve body to apply braking force. However, when the solenoid is de-energized, the pressure in the hydraulic valve body is fixed, preventing continuous application of braking force and causing tire lockup. In the application circuit, due to the residual magnetizing current in the solenoid coil, a freewheeling diode is used to allow the current to decay smoothly, preventing the occurrence of voltage spikes and protecting the electronic devices in the circuit from damage.

Freewheeling diodes typically have high reverse voltage capability and high pulse current capability, enabling them to withstand the high voltage and high current operating environment of automotive ABS systems. Additionally, they have fast switching speeds and low forward voltage drop, reducing energy loss and ensuring efficient system operation.

Taiwan Semiconductor offers AEC-Q101 qualified PRD products. In addition, Taiwan Semiconductor can also provide customers with automotive-grade MOSFETs and TVS for ABS system protection devices to meet the requirements of automotive-specific test standards such as ISO 7637-2, ISO 10650, and ISO 16750-2.

Power Management and Protection in ADAS

ADAS systems play a detailed and complex role in a vehicle’s electrical control system. To protect the circuit from transient overvoltage caused by events like lightning strikes or electrostatic discharge (ESD), it is essential to use TVS diodes for overvoltage protection. TVS diodes have a very low reverse breakdown voltage. When the voltage across the diode exceeds a certain threshold, it begins to conduct, limiting the voltage to the breakdown voltage of the TVS diode and protecting downstream circuits from damage.

TAIWAN SEMICONDUCTOR offers a range of automotive-grade PRD products that fully comply with the AEC-Q101 standard. Moreover, we can provide customers with AEC-Q101 qualified MOSFETs and TVS diodes for ABS system protection devices, meeting the stringent requirements of automotive-specific test standards such as ISO 7637-2, ISO 10650, and ISO 16750-2.

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Powering the Electric Revolution: The Body Control Module (BCM) in Automotive https://web.ts.com.tw/en/blog-bcm/?utm_source=rss&utm_medium=rss&utm_campaign=blog-bcm https://web.ts.com.tw/en/blog-bcm/#respond Fri, 16 Aug 2024 08:55:01 +0000 https://web.ts.com.tw/en/?p=16255 As automobiles become increasingly intelligent, drivers expect more than just basic driving functions; they desire a more humanized and convenient driving experience, such as automated parking assistance and keyless entry. In recent years, with the expansion of the electric vehicle market, the automotive industry has become highly reliant on semiconductors for its power systems. The …

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As automobiles become increasingly intelligent, drivers expect more than just basic driving functions; they desire a more humanized and convenient driving experience, such as automated parking assistance and keyless entry. In recent years, with the expansion of the electric vehicle market, the automotive industry has become highly reliant on semiconductors for its power systems. The Body Control Module (BCM) is a crucial component in automotive engineering, serving as a central hub that integrates various functions and facilitates data exchange between different electronic devices, ensuring driving safety and comfort.

The BCM, also known as the Body Computer, is the management center and information hub of a vehicle, comparable to the human brain or the CPU in a computer. It receives external signals and controls the body systems, responding with appropriate functions. The scope of its control has expanded significantly over the years, encompassing body devices (windows, wipers, mirrors), safety devices (anti-theft systems, remote start), lighting systems (LED headlights, fog lights, indicators), fuel pumps, and heating and air conditioning systems.

The diagram below illustrates the solutions provided by Taiwan Semiconductor at different stages of the BCM.

Body Control Module

Protection

During automotive repair or assembly, reverse connection of the vehicle’s power supply can expose the vehicle controller to damage from reverse voltage. Automotive regulations and OEMs have established requirements for reverse polarity protection in vehicle controllers to mitigate this risk. As a result, reverse polarity protection circuits have become commonplace. These circuits primarily consist of diodes, TVS diodes, or MOSFETs.

 TVS

As a vehicle is in motion, components interact with each other, creating potential interference. A TVS diode in this context can be likened to a door damper. Imagine two cabinets: one with a door damper and the other without. If both doors are closed with the same force, the door without the damper will slam shut quickly and loudly, potentially damaging the cabinet over time. However, the door with the damper will close more gently, protecting the cabinet.

Load Dump TVS

Beyond component-to-component interference, the alternator charging the lead-acid battery can generate transient voltage spikes, especially when driving over rough roads that cause the battery connections to loosen. These high-voltage spikes can last for a relatively long duration and can damage electronic components.

Taiwan Semiconductor’s Load Dump TVS is designed to protect electronic circuits from these transient voltage spikes caused by loose lead-acid battery connections. This component can withstand the transient voltage spikes generated by the alternator and protects automotive electronics, meeting the ISO 7637-2 and ISO 16750-2 test standards. Additionally, it can also meet the IEC 61000-4-2 (Level 4) and ISO 10605 (Level L4) test specifications.

Unclamped
Clamped

Bias Supply

A 12V lead-acid automotive battery is typically converted to 3.3V, 5V, or other voltage levels using a voltage regulator (linear or switching) to power CAN bus/LIN bus transceivers and MCUs.

There are two primary types of voltage regulators:

  • Linear Regulator (LDO) Linear regulators, often referred to as LDOs, are suitable for converting higher input voltages to lower output voltages. LDOs typically consume relatively low power and are well-suited for applications requiring low noise, low current, and a small input-output voltage differential, providing a stable output voltage.
  • Switching Regulator Switching regulators primarily consist of MOSFETs and diodes. By periodically switching the circuit on and off based on a duty cycle (the percentage of time the circuit is on), they generate a stable output voltage. Switching regulators offer a wide range of applications, high efficiency, and ease of use.

 

Interface

CAN bus/LIN bus transceivers primarily serve as communication channels. Think of them as nerves in the human body. When the body receives a stimulus, nerves transmit the signal to the brain. Similarly, when a vehicle receives an external signal (digital input/analog input), it is transmitted to the MCU via the CAN bus or LIN bus. The CAN bus is the primary network, while the LIN bus is a secondary or sub-network.

Load Driver

Once the BCM receives external signals and processes them through the microcontroller unit (MCU), the MCU sends these signals to the corresponding loads, such as body devices (windows, wipers, mirrors).

Many of these devices contain motor-driven loads. Motors are primarily classified into brushed DC (BDC) motors and brushless DC (BLDC) motors. MOSFETs are used to control the direction and speed of these motors.

  • Brushed DC (BDC) Motor BDC motors are a low-cost solution and are commonly used for small load control in automobiles, such as seat adjustment, window switches, and wipers. BDC motors typically use four MOSFETs and a commutator for commutation, making them easy to operate and cost-effective.
  • 3-phase brushless DC (BLDC) Motor BLDC motors employ six MOSFETs and offer low power loss, high reliability, and low noise, making them the preferred choice for high-power applications. With the increasing adoption of electric motors in automobiles, costs are decreasing, making brushless motors increasingly popular in the market.
Brushed DC motor: 4 MOSFETs. (BDC)
Brushless DC motor: 6 MOSFETs. (BLDC)

Additionally, BDC motors have a commutator structure compared to BLDC motors, resulting in more audible noise during operation. To illustrate this, BDC motors can be likened to old ceiling fans that produce a humming sound, while BLDC motors are akin to newer standing fans that operate more quietly.

Feature
Brushed DC (BDC) Motor
Brushless DC (BLDC) Motor
Operation
Easy
High controllability
Cost
Low
Low loss
Service life
Short (brushes wear easily)
Long
Noise
Noisy (due to brushes)
Low noise
Cooling
Easy to cool
Applications

1. Window/sunroof control
2. seat adjustment
3. door locks

1. EPS (Electric Power Steering)
2. braking system
3. HVAC (Heating, Ventilation, and Air Conditioning)
4. transmission system
5. water pump
fuel pump

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The post Powering the Electric Revolution: The Body Control Module (BCM) in Automotive first appeared on Taiwan Semiconductor.

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