New PerFET™ 40V, 80V and 100V Ultra-Low RDS(on) Automotive MOSFETs in PDFN56U Package

Taiwan Semiconductor expands its PerFET™ automotive MOSFET portfolio with eight new 40V, 80V and 100V devices in the compact PDFN56U (5mm × 6mm) package. The new products are designed for automotive power applications requiring low conduction loss, high current capability, and high-power density.

Key features include ultra-low RDS(on), with values down to 1.1mΩ at 40V, 3.6mΩ at 80V, and 3.5mΩ at 100V, together with both logic-level and normal-level gate drive options. These new devices also adopt Source Clip bonding technology, helping reduce package resistance and increase current capability up to 175A. The higher current capability supports lower conduction loss, improved thermal margin, and higher power handling in demanding applications such as DC/DC converters, motor drives, pumps, fans, and other high-current loads.

The PDFN56U wettable flank package supports reliable solder joint inspection and enhanced AOI capability, while its industry-standard 5mm × 6mm footprint enables easy adoption into existing automotive power designs.

Figure 1: PDFN56U Package and Internal Source Clip Structure

Product Portfolio

Part NumberVDS (V)RDS(on) @ 10V Max. (mΩ)VGS(TH) (V)ID (A)Package
TQM011NH04LCR401.11.4 - 2.2175PDFN56U
TQM011NH04CR1.12.4 - 3.6175
TQM036NH08LCR803.61.4 - 2.2161
TQM038NH08CR3.82.4 - 3.6161
TQM035NH10LCR1003.51.4 - 2.2175
TQM037NH10CR3.72.4 - 3.6175
TQM043NH10LCR4.31.4 - 2.2143
TQM045NH10CR4.52.4 - 3.6141
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