PerFET™ 60V Power MOSFETs for Automotive

Taiwan Semiconductor introduces its PerFET™ 60V MOSFET technology in PDFN56U (5mm × 6mm) single and dual packages for automotive applications requiring high power density and high switching frequency. The portfolio includes 12 devices with both normal-level (10V) and logic-level (5V) gate drive options, offering optimized RDS(on) × Qg performance for a wide range of designs.

Based on advanced 60V Shielded Gate Trench (SGT) technology, the PerFET™ MOSFETs feature low RDS(on), low gate charge, and fast switching performance, supporting high-efficiency DC/DC converters, motor drives, pumps, fans, and other high-current automotive loads.

The PDFN56U wettable flank package supports reliable solder joint inspection and improved AOI capability. Its 5mm × 6mm footprint also offers broad compatibility with commonly used industry-standard packages.

Figure1: PDFN56U and PDFN56U Dual package

Key Features

  • AEC-Q101 qualified
  • Best-in-class FOM (RDS(on) × Qg)
  • Optimized RDS(on) for low conduction losses
  • Low gate charge for reduced switching losses
  • 175°C junction temperature (TJ)
  • Wettable flank enhanced AOI accuracy

Applications

  • 12V & 24V Automotive applications
  • SMPS, Server and Telecom power supply
  • DC/DC converter
  • BLDC motor driver

Product Portfolio

Part NumberVDS (V)RDS(on) @ 10V Max. (mΩ)VGS(TH) (V)ID (A)Qg (nC) @ 10VPackage
TQM026NH06LCR602.61.4 - 2.410076PDFN56U
TQM027NH06CR2.72.4 - 3.610084
TQM037NH06LCR3.71.4 - 2.410054
TQM038NH06CR3.82.4 - 3.610052
TQM050NH06LCR51.4 - 2.48141
TQM052NH06CR5.22.4 - 3.68140
TQM080NH06LCR81.4 - 2.45425
TQM085NH06CR8.52.4 - 3.65424
TQM115NH06LCR11.51.4 - 2.44917
TQM120NH06CR122.4 - 3.64816
TQM130NH06LDCR131.4 - 2.44017.2PDFN56U Dual
TQM130NH06DCR132.4 - 3.64016.2
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